6
RF Device Data
Freescale Semiconductor
MRF6P21190HR6
TYPICAL CHARACTERISTICS
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
1 10010
-- 5 5
-- 1 5
0.1
7th Order
TWO--TONE SPACING (MHz)
VDD
=28Vdc,Pout
= 190 W (PEP), IDQ
= 1900 mA
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
5th Order
3rd Order
-- 2 0
-- 3 0
-- 4 0
-- 4 5
-- 5 0
IMD, INTERMODULATIO
N DISTORTION (dBc)
-- 2 5
-- 3 5
Figure 8. Pulsed CW Output Power versus
Input Power
44
58
33 35 37 39 41 4334
P3dB = 54.45 dBm (279 W)
Pin, INPUT POWER (dBm)
VDD
=28Vdc,IDQ
= 1900 mA
Pulsed CW, 8
μsec(on), 1 msec(off)
f = 2140 MHz
56
54
52
47
36 38 40 42
Actual
Ideal
P1dB = 53.7 dBm (233 W)
57
48
32
P
out
, OUTPUT POWER (dBm)
50
IM3 (dBc), ACPR (dBc)
Figure 9. 2--Carrier W--CDMA ACPR, IM3,
Power Gain and Drain Efficiency
versus Output Power
0--600
Pout, OUTPUT POWER (WATTS) AVG.
30
-- 3 0
25
20
-- 3 5
15
-- 4 0
5
-- 5 0
1 10 100
-- 4 5
10
η
D
, DRAIN EFFICIENCY (%), G
ps
, POWER GAIN (dB)
-- 5 5
IM3
ηD
Gps
ACPR
300
18
0
60
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
VDD
=28Vdc
IDQ
= 1900 mA
f = 2140 MHz
100
10
15
12
9
6
3
50
40
30
20
10
η
D
,
DRAIN EFFICIENCY (%)
Gps
ηD
G
ps
, POWER GAIN (dB)
Figure 11. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) CW
VDD
=28V
G
ps
, POWER GAIN (dB)
500
6
18
10
16
10
8
100
12
14
24 V
IDQ
= 1900 mA
f = 2140 MHz
20 V
VDD=28Vdc,IDQ
= 1900 mA
f1 = 2135 MHz, f2 = 2145 MHz
2--Carrier W--CDMA, 10 MHz
Carrier Spacing, 3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
3
3
55
53
51
49
LIFETIME BU
Y
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
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